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单N-MOS

PED30H15G DFN5x6-8L

    PED30H15G是VDS=30V,ID=80A,RDS(ON)<3mΩ@VGS=10V,RDS(ON)<4mΩ@VGS=4.5V的N沟道MOSFET。
    PED30H15G的丝印是PED30H15G,PED30H15G提供DFN5x6-8L封装。
    The PED30H15G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PED30H15G概述:
        PED30H15G是VDS=30V,ID=80A,RDS(ON)<3mΩ@VGS=10V,RDS(ON)<4mΩ@VGS=4.5V的N沟道MOSFET。PED30H15G的丝印是PED30H15G,PED30H15G提供DFN5x6-8L封装。
        The PED30H15G uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PED30H15G特性:
    VDS = 30V, ID = 80A
    RDS(ON) < 3mΩ@ VGS=10V
    RDS(ON) < 4mΩ @VGS=4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED30H15G应用:
    Battery management
    Motor controller and driver
    PWM applications
    Load switch

    PED30H15G典型应用及引脚

    请提交您的基本信息,发邮件Sales@ChipSourceTek.com,或者打电话给我们,13823761625(微信同号),我们将会尽快与您联系!

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