PED2311DN概述：
PED2311DN是VDS=18V，ID=12A，RDS(ON)<7.5mΩ@VGS=4.5V，RDS(ON)<8.6mΩ@VGS=3.8V，RDS(ON)<10mΩ@VGS=3.1V，RDS(ON)<11mΩ@VGS=2.5V的N沟道MOSFET。PED2311DN的丝印是NC25,PED2311DN提供DFN2x3-6L封装。
The PED2311DN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PED2311DN特性：
VDS = 18V, ID = 12A
RDS(ON) < 7.5mΩ @ VGS=4.5V
RDS(ON) < 8.6mΩ @VGS=3.8V
RDS(ON) < 10mΩ @VGS=3.1V
RDS(ON) < 11mΩ @VGS=2.5V
ESD Rating: 4000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PED2311DN应用：
PWM applications
Load switch
Power management
PED2311DN典型应用及引脚：
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