PED2512L是VDS=18V，ID=10A，RDS(ON)<9.5mΩ@VGS=4.5V，RDS(ON)<9.8mΩ@VGS=4.2V，RDS(ON)<10.5mΩ@VGS=3.8V，RDS(ON)<13mΩ@VGS=2.5V的N沟道MOSFET。PED2512L的丝印是2512，PED2512L提供PDFN2*5-6L封装。

    The PED2512L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

VDS = 18V, ID = 10 A 

RDS(ON) < 9.5mΩ @ VGS=4.5V 

RDS(ON) < 9.8mΩ @ VGS=4.2V 

RDS(ON) < 10.5mΩ @ VGS=3.8V 

RDS(ON) < 13mΩ @ VGS=2.5V

High Power and current handing capability 

Lead free product is acquired 

Surface Mount Package

PWM applications 

Load switch 

Power management 

Battery Protection