PE8120HM1概述：
PE8120HM1的VDS>12V,ID=20A，RDS(ON)<4.6mΩ，@VGS=4.5V，RDS(ON)<5.0mΩ，@VGS=3.8V，RDS(ON)<5.5mΩ，@VGS=3.0V，RDS(ON)<6.5mΩ，@VGS=2.5V的N-Channel Enhancement Mode Power MOSFET.PE8120HM1的丝印是8120HM.PE8120HM1提供DFN3x3-8L封装.
The PE8120HM1 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PE8120HM1特性：
VDS > 12V, ID = 20A
RDS(ON) < 4.6mΩ@ VGS=4.5V
RDS(ON) < 5.0mΩ @VGS=3.8V
RDS(ON) < 5.5mΩ @VGS=3.0V
RDS(ON) < 6.5mΩ @VGS=2.5V
ESD Rating: 4000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PE8120HM1应用：
PWM applications
Load switch
Power management
PE8120HM1典型应用及引脚：
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