PED2013M概述：
PED2013M是VDS=-20V，ID=-40A，RDS(ON)<7mΩ@VGS=-10V，RDS(ON)<8.5mΩ@VGS=-4.5V，RDS(ON)<14mΩ@VGS=-2.5V的P沟道MOSFET。PED2013M的丝印是PED2013M，PED2013M提供PDFN3.3x3.3-8L封装。
The PED2013M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
PED2013M特性：
VDS = -20V, ID = -40A
RDS(ON) < 7mΩ @ VGS=-10V
RDS(ON) < 8.5mΩ @ VGS=-4.5V
RDS(ON) < 14mΩ @VGS=-2.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PED2013M应用：
PWM applications
Load switch
Power management
PED2013M典型应用及引脚：
Business consulting
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