PED645K概述：
PED645K是VDS=18V，ID=10A，RDS(ON)<6.5mΩ@VGS=4.5V，RDS(ON)<7mΩ@VGS=3.8V，RDS(ON<8.5mΩ@VGS=2.5V的N沟道MOSFET。PED645K的丝印是645K，PED645K提供DFN3x3-8L封装。
The PED645K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PED645K特性：
VDS = 18V, ID = 10A
RDS(ON) < 6.5mΩ @VGS=4.5V
RDS(ON) < 7mΩ@VGS=3.8V
RDS(ON) < 8.5mΩ @VGS=2.5V
ESD Rating: 2000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
PED645K应用：
PWM applications
Load switch
Power management
Battery protection
PED645K典型应用及引脚：
Business consulting
13823761625
Mail me