InnoSeco releases 100V vehicle grade GaN, continuously advancing the automotive LiDAR market
Time:2023-12-30
Views:431
InnoSeco announced the launch of the 100V automotive grade gallium nitride device INN100W135A-Q, which has passed AEC-Q101 certification and is suitable for automotive grade LiDAR, high-power density DC-DC converters, and D-class audio in autonomous driving and other advanced driving assistance system applications.
The INN100W135A-Q product specification sheet and simulation model can be obtained from the official website of InnoScience (www.innoscience. com). For sample requirements, please contact sales or the backend private message editor.
In the field of LiDAR, the parameters such as Qg and Qoss of gallium nitride devices are 1.5 to 3 times higher than those of silicon devices; Compared with early LiDAR products, using gallium nitride can increase switching speed by 13 times and reduce pulse width by one-fifth. Currently, the recognition distance of L2 assisted driving using MOS scheme is only 100m, while L2+/L3 assisted driving must achieve medium to long distance recognition of 200m/300mm. Only by using narrow pulse, high peak current, and high-power gallium nitride scheme can high-performance guarantee be provided for autonomous driving LiDAR.
Product features
• Passed AEC-Q101 certification, vehicle grade
• Extremely low gate charge
• Ultra small package WLCSP 2.13mm x 1.63mm
• Zero reverse recovery of charging charge
application area
• Lidar
• High power density DC-DC converter
• Class D audio
• High intensity headlights
Product advantages
• Compared to silicon devices, parameters such as Qg and Qoss have a 1.5-3 fold increase
•Compared to silicon devices, the switching speed is increased by 13 times and the pulse width is reduced to 1/5 of that of silicon devices
• Achieve mid to long distance recognition of 200m/300mm, meeting L2+/L3 assisted driving requirements
INN100W135A-Q specification sheet homepage
In 2021, InnoGaN (Zhuhai) passed the IATF 16949 vehicle level certification and successfully launched InnoGaN‘s LiDAR product; In 2023, InnoTech (Suzhou) passed the IATF 16949 vehicle level certification, and the new generation 100V low-voltage GaN completed AEC-Q101 certification and successfully mass produced, with batch orders being delivered.
InnoSeco is a globally leading third-generation semiconductor high-tech enterprise dedicated to the research and manufacturing of silicon-based gallium nitride (GaN on Si). We have the world‘s largest 8-inch silicon-based gallium nitride wafer production base, with a current production capacity of 15000 pieces per month, and our product design and performance are at the international advanced level. InnoSeco provides high, medium, and low voltage full power gallium nitride products ranging from 30V to 700V, covering three major categories: wafers, discrete devices, and sealed chips, and provides customers with design references for all gallium nitride solutions. Since its establishment in 2015, InnoTech has obtained over 700 patents and has shipped over 400 million units. The product can be widely used in cutting-edge fields such as consumer electronics, data centers, automotive electronics, and new energy.
InnoSeco, using gallium nitride to create a green and efficient new world!
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