Infineon launches a new generation of dual channel isolated gate driver ICs to enhance the system performance of SMPS design
Time:2023-12-18
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Nowadays, the 3.3 kW switching power supply (SMPS) can achieve a power density of up to 100 W/inch3 by using the latest technologies such as superjunction (SJ silicon) power MOSFETs and silicon carbide (SiC) power MOSFETs in the totem pole PFC stage, as well as gallium nitride (GaN) power switches that can meet the requirements of high-voltage DC-DC power conversion. The digital control of PFC and DC-DC, like excellent gate drive solutions, is crucial for improving energy efficiency and enhancing robustness. In order to meet the latest design and application requirements, Infineon Technologies has launched a new generation of dual channel electrical isolation EiceDRIVE ™ Gate driver IC product series.
This product series has multiple Under Voltage Lockout (UVLO) threshold options and isolation levels, and adopts different packaging technologies, providing a complete solution for various applications. The new product portfolio will combine powerful isolation technology that meets the latest industry standards with excellent electrical parameters, enabling efficient and reliable operation over a wide operating temperature range and extending the lifespan of devices. This series of drives has a wide range of applications, suitable for servers and telecommunications SMPS, solar inverters and energy storage systems, motor drive and battery powered applications, electric vehicle charging, and high-performance computing.
Compared with the previous generation of products, the new generation EiceDRIVE has introduced a DSO 14 pin package, which can increase the creepage distance between channels; At the same time, the built-in dead time control and breakdown protection function can also shorten the UVLO startup time. The new generation EiceDRIVE adopts powerful isolation technology that complies with the latest device level isolation standards in the industry (VDE 0884-11, IEC 60747-17). In addition, this series of drives also features a highly compact LGA 4x4 mm2 package, which can save up to 36% of space in low voltage applications. One of the important improvements and upgrades made by developers to the new generation EiceDRIVE is the integration of electrical isolation technology in gate driver ICs, which has now passed IEC 60747-17 certification. Obtaining IEC 60747-17 certification means that the service life of these products can reach 20 years and meet the requirements of the highest safety standards.
Shorter UVLO startup time (from the original 5 μ Shorten s to 2 μ s) Accelerated the startup speed of SMPS and also avoided saturation of the main power transformer. In addition, the new generation of ICs comes with a special output clamp circuit, which achieves active output clamp function and can quickly suppress output noise even when the channel is not working. This versatile method can prevent dangerous half bridge through events during bootstrapping while the gate driver power supply is still below the UVLO on threshold.
The new generation gate driver IC has built-in configurable breakdown protection (STP) and dead time control (DTC) in the hardware. These two functions can serve as a second level of security mechanism, providing further protection to ensure the safe and reliable operation of the gate driver IC. In addition, innovative packaging designs remove unused or previously referred to as "unconnected" pins, improving the isolation level between channels and the flexibility of PCB layout, thereby reducing the difficulty of circuit development for designers.
Supply situation
The new generation of dual channel electrically isolated gate driver ICs adopts two packaging forms: pin DSO packaging and pin free LGA packaging. Among them, DSO packaging is available in two configurations: 14 pin and 16 pin, both of which come in two sizes: 150mil (narrow body) and 300mil (wide body). LGA packaging is available in two sizes: 5x5 mm2 and 4x4 mm2.
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