Rom launches 650V gallium nitride power stage IC with integrated driver and power transistor

    In the past few years, consumers and the industrial sector have increasingly needed more energy conservation to achieve sustainable society. Although GaN HEMT has the potential to significantly promote miniaturization and improve power conversion efficiency, compared to silicon MOSFETs, gate driving is more difficult and requires the use of dedicated gate drivers. To this end, ROHM developed a power level IC that utilizes core power and simulation technology to integrate GaN HEMT and gate drivers into a single package, greatly simplifying design and installation.

    In addition, the BM3G0xxMUV-LB series (BM3G015MUV-LB, BM3G007MUV-LB) also integrates additional functions and peripheral components, aiming to maximize GaN HEMT performance and 650V GaN HEMT (next-generation power device). ROHM‘s wide driving voltage range (2.5V to 30V) and other features are compatible with almost all controller ICs in the main power supply, thereby helping to replace existing silicon (super junction) MOSFETs. This allows for a simultaneous reduction of 55% in component volume and power loss, achieving higher efficiency in smaller sizes.

    As a device that has made significant contributions to device miniaturization and energy conservation, GaN devices have received widespread attention in the industry, "said ISAAC LIN, General Manager of Delta Electronics PSADC (Power Semiconductor Application Development Center)

    The new product of ROHM utilizes ROHM‘s unique simulation technology to achieve high-speed and safe gate drive. These products will further promote the use of GaN power devices.