The fourth generation of semiconductors made another breakthrough. Our team prepared high-quality gallium oxide epitaxial wafers on 8-inch silicon wafers

Source: IT Home Author: Ocean

    On March 14, IT Home learned from the official website of Xi‘an University of Posts and Telecommunications that a few days ago, Professor Chen Haifeng from the Key Laboratory of New Semiconductor Devices and Materials of Xi‘an University of Posts and Telecommunications successfully prepared high-quality GaO epitaxial wafers on 8-inch silicon wafers, which marked the important progress of the university in the research of ultra-wide band gap semiconductors.

    Professor Chen Haifeng, the leader of the team, said that gallium oxide is an ultra-wide band gap semiconductor material with excellent high-voltage resistance and sun-blind ultraviolet response characteristics, and has great potential for application in power devices and optoelectronics. GaO heteroepitaxy on silicon is conducive to the direct integration of silicon circuits and GaO circuits, and has the advantages of low cost and good heat dissipation.

    Gallium oxide is a new ultra-wide band gap semiconductor material. It is the fourth generation semiconductor material that has been widely concerned and recognized internationally and has started industrialization. Compared with the previous generation of semiconductor materials, gallium oxide materials have higher breakdown electric field strength and lower on-resistance, which leads to lower energy loss and higher power conversion efficiency. In addition, gallium oxide has good chemical and thermal stability, low cost, simple preparation method, convenient batch production, and obvious advantages in industrialization.

     In recent years, China has made continuous breakthroughs in the preparation of gallium oxide. From 2 inches to 6 inches last year to the latest 8 inches, the preparation technology of gallium oxide has become more and more mature.