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单P-MOS

PED20D09M PDFN3.3x3.3-8L

    PED20D09M是VDS=-18V,ID=-9A,RDS(ON)<20mΩ@VGS=-10V,RDS(ON)<25mΩ@VGS=-4.5V,RDS(ON)<30mΩ@VGS=-2.5V的P沟道MOSFET。
    PED20D09M的丝印是20D09M,PED20D09M提供PDFN3.3x3.3-8L封装。
    The PED20D09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PED20D09M概述:
        PED20D09M是VDS=-18V,ID=-9A,RDS(ON)<20mΩ@VGS=-10V,RDS(ON)<25mΩ@VGS=-4.5V,RDS(ON)<30mΩ@VGS=-2.5V的P沟道MOSFET。PED20D09M的丝印是20D09M,PED20D09M提供PDFN3.3x3.3-8L封装。
        The PED20D09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PED20D09M特性:
    VDS = -18V, ID = -9A
    RDS(ON) < 20mΩ @VGS=-10V
    RDS(ON) < 25mΩ @VGS=-4.5V
    RDS(ON) < 30mΩ @VGS=-2.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED20D09M应用:
    PWM applications
    Load switch
    Power management

    PED20D09M典型应用及引脚:

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