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单N-MOS

PED30D08M PDFN3.3x3.3-8L

    PED30D08M是VDS=30V,ID=22A,RDS(ON)<22mΩ@VGS=10V,RDS(ON)<30mΩ@VGS=4.5V的N沟道MOSFET。
    PED30D08M的丝印是30D08M,PED30D08M提供PDFN3.3x3.3-8L封装。
    The PED30D08M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
    PED30D08M概述:
        PED30D08M是VDS=30V,ID=22A,RDS(ON)<22mΩ@VGS=10V,RDS(ON)<30mΩ@VGS=4.5V的N沟道MOSFET。PED30D08M的丝印是30D08M,PED30D08M提供PDFN3.3x3.3-8L封装。
        The PED30D08M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.

    PED30D08M特性:
    VDS = 30V, ID = 22A
    RDS(ON) < 22mΩ @ VGS=10V
    RDS(ON) < 30mΩ @VGS=4.5V
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED30D08M应用:
    PWM applications
    Load switch
    Power management

    PED30D08M典型应用及引脚:

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