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单N-MOS

PED2313N DFN2x3-6L

    PED2313N是VDS=18V,ID=9.5A,RDS(ON)<9mΩ@VGS=4.5V,RDS(ON)<10mΩ@VGS=3.8V,RDS(ON)<11.5mΩ@VGS=3.1V,RDS(ON)<14mΩ@VGS=2.5V的N沟道MOSFET。
    PED2313N的丝印是SC29,PED2313N提供DFN2x3-6L封装。
    The PED2313N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
    PED2313N概述:
        PED2313N是VDS=18V,ID=9.5A,RDS(ON)<9mΩ@VGS=4.5V,RDS(ON)<10mΩ@VGS=3.8V,RDS(ON)<11.5mΩ@VGS=3.1V,RDS(ON)<14mΩ@VGS=2.5V的N沟道MOSFET。PED2313N的丝印是SC29,PED2313N提供DFN2x3-6L封装。
        The PED2313N uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.

    PED2313N特性:
    VDS = 18V, ID = 9.5A
    RDS(ON) < 9mΩ @ VGS=4.5V
    RDS(ON) < 10mΩ @VGS=3.8V
    RDS(ON) < 11.5mΩ @VGS=3.1V
    RDS(ON) < 14mΩ @VGS=2.5V
    ESD Rating: 4000V HBM
    High Power and current handing capability
    Lead free product is acquired
    Surface Mount Package

    PED2313N应用:
    PWM applications
    Load switch
    Power management

    PED2313N典型应用及引脚:

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