產品型號功能和適用範圍封裝形式文檔下載
MX3N10G 牧芯微MX3N10GN沟MOS,100V输入电压,2.2A输出电流,适用于雾化器上,所以也叫雾化专用MOS,MX3N10G提供SOT23.SOT89-3SOT223三种封装 SOT23 SOT89-3 MX3N10G
TXY8205 MOS管 输入电压:20V 输出电流:7A.适用于电池供电设备,电池保护板,通信产品 SOT23-6 TXY8205
9926 MOS管 输入电压:20V 输出电流:8A。适用于电池供电设备,电池保护板, 通信产品 SOP8 9926
MX3415L MX3415L是VDS=-20V, ID=-4A,RDS(ON) (Typ.)=42mΩ@VGS=-2.5V,RDS(ON)(Typ.)=32mΩ@VGS =-4.5V的P沟道MOSFET,MX3415L提供SOT23封装。 SOT23 MX3415L
MX2319 MX2319是VDS>=-18VID=-7ARDS(ON)(Typ.)=17mΩ@VGS=-4.5VRDS(ON)(Typ.)= 22mΩ@VGS=-2.5V的P沟道MOSFET丝印:2319,MX2319提供SOT23-3封装。 SOT23-3 MX2319
MXD50N06 MXD50N06是VDS=60V, ID=50AR , R DS(ON) (Typ.)=11.5mΩ @ VGS=10V,MXD50N06提供TO-252封装。The MXD50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . Those devices are suitable for use in PWM, load switc TO-252 MXD50N06.pdf
MX3117 MX3317是VDS =-30V, ID=-7A,RDS(ON)(Typ.)=23mΩ@VGS=-4.5V,RDS(ON)(Typ.)=17mΩ@VGS=-10V, 的P MOSFET,MX3317丝印3117C,MX3317提供SOT23-3L封装。The MX3117 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. It can be used in a wide variety of SOT23-3L MX3117.pdf
HYG025N04NA1C2 HYG025N04NA1C2 是N沟道增强型功率MOSFET,HYG025N04NA1C2 是 40V/190A的N沟MOSFET/RDS(ON)= 1.4mΩ(typ.)/HYG025N04NA1C2 适用于锂电池保护板、负载开关等/HYG025N04NA1C2 提供PDFN8L封装 PDFN8L HYG025NA1C2
JMTP170C04D JMTP170C04D是40V,N+P的MOSFET,JMTP170C04D特性:N-Channel: 40V, 10A/RDS(ON) < 20mΩ @ VGS = -10V, RDS(ON) < 27mΩ @ VGS = -4.5V/P-Channel: -40V, -10A/RDS(ON) < 44mΩ @ VGS = -10V,RDS(ON) < 62mΩ @ VGS = -4.5V.JMTP170C04D提供SOP8封装,丝印:170C04D。 SOP8 JMTP170C04D
MXN3388L MXN3388L是20V,8A,双N沟道MOSFET,MXN3388L是20V,8A的N沟MOSFET/RDS(ON)(Typ.)=15.5mΩ @ VGS=2.5V RDS(ON)(Typ.)=10.6mΩ @ VGS=3.8V RDS(ON)(Typ.)=10mΩ @ VGS=4.5V ESD Rating: 2000V HBM/MXN3388L提供 DFN3X3-8L封装 DFN3X3-8L MXN3388L
MXT08N04T MXT08N04T 是N沟道增强型功率MOSFET,MXT08N04T 是40V,400A的N沟MOSFET/RDS(ON)(Typ.)=1.1mΩ @ VGS=4.5V RDS(ON)(Typ.)=0.85mΩ @ VGS=10V/MXT08N04T 提供TOLL-8L封装 TOLL-8L MXT08N04T N管
HYG090N06LS1C2 HYG090N06LS1C2是N沟道增强型功率MOSFET,HYG090N06LS1C2是60V/60AN的沟MOSFET/RDS(ON)= 7.7 mΩ(typ.)@VGS = 10V 、RDS(ON)= 11.8 mΩ(typ.)@VGS = 4.5V/HYG090N06LS1C2丝印G090N06,HYG090N06LS1C2提供PDFN5*6-8L封装。 PDFN5*6-8L HYG090N06LS1C2.pdf
HYG013N03LS1C2 HYG013N03LS1C2是N沟道增强型功率MOSFET,HYG013N03LS1C2是30V,150A的N沟MOSFET/ RDS(ON)= 1.3mΩ (typ.) @VGS = 10V RDS(ON)= 2.0mΩ (typ.) @VGS = 4.5V/HYG013N03LS1C2丝印G013N03,HYG013N03LS1C2提供PDFN5*6-8L封装。 PDFN5*6-8L HYG013N03LS1C2
HYG025N06LS1D HYG025N06LS1D是N沟道增强型功率MOSFET,HYG025N06LS1D是60V,160A的N沟MOSFET/RDS(ON)= 2.6 mΩ (typ.) @ VGS = 10V RDS(ON)= 3.8 mΩ (typ.) @ VGS = 4.5V/HYG025N06LS1D丝印G025N06,HYG025N06LS1D提供TO-252-2L封装。 TO-252-2L HYG025N06LS1D
JMTK90N02A JMTK90N02A TO252是一款20V, 90A,N沟道MOS管,JMTK90N02A TO252丝印:K90N02A, JMTK90N02A TO252提供TO-252-4R(DPAK)封装,JMTK90N02A TO252,20V, 90A,RDS(ON)<4.0mΩ@VGS=4.5V,RDS(ON)<6.0mΩ@VGS=2.5V,Lead free and Green Device Available,Excellent RDS(ON) and Low Gate Charge,Lead fre TO-252-4R JMTK90N02A
JMTK10N10A JMTK10N10A是N沟道增强型功率MOSFET,JMTK10N10A是100V,10A的N沟MOSFET/RDS(ON) <110mΩ @ VGS = 10V RDS(ON) <140mΩ @ VGS = 4.5V/JMTK10N10A丝印K10N10A/JMTQ025N02提供TO-252封装 TO-252 JMTK10N10A
JMTL123K JMTL123K是N沟道增强型功率MOSFET,JMTL123K是100V,0.17A的N沟MOSFET/RDS(ON) <6Ω @ VGS = 10V RDS(ON) <9Ω @ VGS = 4.5V/JMTL123K丝印123K/JMTL123K提供SOT-23封装 SOT-23 JMTL123K
JMTL2002KT2 JMTL2002KT2是N沟道增强型功率MOSFET,JMTL2002KT2是20V,0.75A的N沟MOSFET/RDS(ON)< 380mΩ @ VGS =4.5V RDS(ON)< 450mΩ @ VGS =2.5V/JMTL2002KT2提供SOT-23封装 SOT-23 JMTL2002KT2
JMTL2N7002K JMTL2N7002K是N沟MOS管/VDS=60V, ID=0.3A RDS(ON) <2.8Ω @ VGS = 10V RDS(ON) <3.6Ω @ VGS = 5V /Advanced Trench Technology/Excellent RDS(ON) and Low Gate Charge/Lead free product is acquired /ESD Protected: 2KV/JMTL2N7002K提供SOT23封装/丝印:72K MOS管 SOT-23 JMTL2N7002K
JMTQ55P02A JMTQ55P02A是P沟道增强型功率MOSFET,JMTQ55P02A是-20V,-55A的P沟MOSFET/RDS(ON) <8.5mΩ @ VGS = -4.5V RDS(ON) <12mΩ @ VGS = -2.5V/JMTQ55P02A丝印Q55P02A/JMTQ55P02A提供PDFN3.3X3.3-8L封装 PDFN3.3X3.3-8L JMTQ55P02A

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