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International IDM took the lead in moving vehicle MOSFET and IGBT to 12 inch production line

Time:2022-02-22 Views:2248
    On February 21, IDM is taking the lead in migrating the production of high profit automotive MOSFET and IGBT power modules from 8 inches to 12 inches, so as to improve its competitiveness in this field.

    Toshiba semiconductor recently announced plans to invest 100 billion yen ($869.4 million) to expand its 12 inch automotive power module Fab capacity, the Electronic Times quoted the source as saying. Infineon and AOS also boldly adopt 12 inch wafer capacity to internally produce high-end automotive MOSFET and IGBT power chip solutions, with high gross margin and technical threshold.


    While shifting production emphasis to automotive power modules, IDM is also cutting production of MOSFET for IT applications, resulting in a shortage of consumer grade MOSFET and prompting customers to shift orders to suppliers in China‘s Taiwan. Sources said that the latter are strengthening the production of Sgt MOSFET to meet the orders of commercial laptops and desktops.

    Different from international IDM, these manufacturers still rely on 8-inch production lines to produce it MOSFETs, most of which adopt 0.18um, 0.13um, 0.11um and 90nm processes. However, sources pointed out that the supply capacity of 8-inch continuous tightening will become one of the main factors affecting the shipments of these manufacturers.


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    矽源特科技ChipSourceTek